Memory Circuit Design Engineer

Intel Intel · Semiconductors · Oregon, Hillsboro, United States

Memory Circuit Design Engineer role focused on developing and optimizing embedded memory designs on Intel advanced CMOS process technologies. Responsibilities include memory pathfinding, PPA optimization, circuit innovation, layout, verification, and validation.

What you'd actually do

  1. Memory pathfinding activities and power, performance and area (PPA) optimization through design technology co-optimization (DTCO) and product design enablement.
  2. Memory bit-cell and complex periphery IC layout and automation.
  3. Memory array/IP design, memory circuit innovation, test-chip design.
  4. Pre-Si verification, post-Si validation and debugging to enable yield and parametric tracking/ramp.

Skills

Required

  • Master’s degree in Electrical Engineering, Computer Engineering, Electrical & Computer Engineering, or a related discipline, including 4 years of professional experience gained through either internships or full-time employment
  • Ph.D. in one of the same fields listed above.
  • Design, characterization, and verification of custom memory circuits such as SRAM, Register Files or ROM
  • Design trade-offs between power, performance, and area (PPA)
  • Custom digital circuit design, simulation, layout design, and verification
  • Experience in EDA tools used for custom digital and memory circuit design.

Nice to have

  • Ph.D. with 1-2 years of professional experience gained through either internships or full-time employment.
  • Design technology co-optimization (DTCO)
  • Post-Si validation experience.
  • Knowledge of the CMOS ASIC design flow.

What the JD emphasized

  • custom memory circuits such as SRAM, Register Files or ROM
  • Design trade-offs between power, performance, and area (PPA)
  • Custom digital circuit design, simulation, layout design, and verification