Memory Circuit Design Engineer

Intel Intel · Semiconductors · Oregon, Hillsboro, United States +1

Memory Circuit Design Engineer at Intel, focusing on developing and optimizing embedded memory designs on advanced CMOS process technologies. Responsibilities include pathfinding, PPA optimization, layout, circuit innovation, and pre-Si/post-Si validation.

What you'd actually do

  1. Memory pathfinding activities and power, performance and area (PPA) optimization through design technology co-optimization (DTCO) and product design enablement.
  2. Memory bit-cell and complex periphery IC layout and automation.
  3. Memory array/IP design, memory circuit innovation, test-chip design.
  4. Pre-Si verification, post-Si validation and debugging to enable yield and parametric tracking/ramp.

Skills

Required

  • Master's degree OR Ph.D. in Electrical Engineering, Computer Engineering, Electrical and Computer Engineering, or a related discipline, including 2 years of professional experience.
  • CMOS ASIC design flow
  • Custom digital circuit design, simulation, layout design, and verification
  • Experience with EDA tools used for analog, digital and mixed-signal circuit design.
  • Post-Si validation experience

Nice to have

  • Master's degree in Electrical Engineering, Computer Engineering, Electrical and Computer Engineering, or a related discipline with 4 years of experience OR Ph. D with 1-2 years of professional experience gained through either internships or full-time employment
  • Design, characterization, and verification of custom memory circuits such as SRAM, Register Files or ROM
  • Design trade-offs between power, performance, and area (PPA)
  • Design technology co-optimization (DTCO)

What the JD emphasized

  • high-performance
  • high-density
  • low-power