Overview
At Microsoft Quantum, we aim to empower science and scientists to solve the world’s biggest problems by realizing advanced computing platforms at the intersection of high-performance computing, artificial intelligence, and quantum information technology. Microsoft Quantum will change the world of computing and help solve some of humankind’s currently unsolvable problems. For more information about our team, visit https://www.microsoft.com/en-us/quantum.
Microsoft Quantum is building the world’s first scalable quantum computing system, with a full‑stack approach spanning materials, devices, systems, and cloud services. Our hardware strategy is centered on topological qubits, which require sophisticated nanofabrication of hybrid semiconductor–superconductor devices with stringent control of interfaces, materials quality, and process integration.
We are seeking a Senior Quantum Materials MBE Engineer to develop and optimize MBE growth processes that enable high-quality quantum materials and devices. This role focuses on execution excellence, experimental rigor, and cross-functional collaboration, contributing directly to improvements in qubit performance and scalability.
You will work closely with experts in device physics, modeling, fabrication, and characterization in a fast-paced, interdisciplinary R&D environment.
Microsoft’s mission is to empower every person and every organization on the planet to achieve more. As employees we come together with a growth mindset, innovate to empower others, and collaborate to realize our shared goals. Each day we build on our values of respect, integrity, and accountability to create a culture of inclusion where everyone can thrive at work and beyond.
Responsibilities
Advanced Heterostructure Growth: Develop, implement, and optimize MBE growth recipes for semiconductor–superconductor heterostructures; Execute experiments to control interfaces, composition, strain, and defect density; Improve materials quality through iterative refinement of growth conditions and process parameters
Materials–Device Feedback & Experimentation: Design and execute data-driven experiments linking growth conditions to materials properties and device outcomes; Contribute to the growth → structure → properties → device feedback loop; Analyze and interpret experimental results to guide subsequent growth and process optimization
Tooling & Diagnostics: Operate and maintain UHV MBE systems and in-situ diagnostics (e.g., RHEED, spectroscopy); Support upgrades and improvements to MBE tools and measurement capabilities; Ensure reliable operation and high data quality from characterization tools
Cross-Functional Collaboration: Work closely with nanofabrication, characterization, theory, and device teams to align on process requirements; Communicate experimental results and materials insights clearly to diverse stakeholders; Support integration of materials advances into device fabrication flows
AI-Enabled Materials Development: Apply modern AI/ML tools to improve experiment planning, analysis, and optimization: Contribute to automation frameworks for data analysis and reporting
Other
- Embody our culture and values.
Qualifications
**Required Qualifications **
Doctorate in Physics, Engineering, or related field AND 1+ year(s) experience in industry or in a research and development environment, could include completion of a post doctoral research position
- OR Master's Degree in Physics, Engineering, or related field AND 4+ years experience in industry or in a research and development environment
- OR Bachelor's Degree in Physics, Engineering, or related field AND 6+ years experience in industry or in a research and development environment
- OR equivalent experience.
As stated in the job posting, this position requires verification of citizenship or other protected status to meet legal requirements of the role. If the role requires US citizenship, as indicated in the job description, a valid US passport must be provided to verify your citizenship. If the role requires US Person status, as indicated in the job description, US citizens must provide a valid US passport for verification while lawful permanent residents, refugees, and asylees may complete this verification using green cards or other status documents, as applicable.
**Other Requirements **
Ability to meet Microsoft, customer and/or government security screening requirements are required for this role. These requirements include, but are not limited to the following specialized security screenings:
- Microsoft Cloud Background Check: This position will be required to pass the Microsoft Cloud Background Check upon hire/transfer and every two years thereafter.
- Citizenship & Citizenship Verification: This role will require access to information that is controlled for export under export control regulations, potentially under the U.S. International Traffic in Arms Regulations (ITAR) or Export Administration Regulations (EAR), the EU Dual Use Regulation, and/or other export control regulations. As a condition of employment, the successful candidate will be required to provide either proof of their country of citizenship or proof of their U.S. permanent residency or other protected status (e.g., under 8 U.S.C. § 1324b(a)(3)) for assessment of eligibility to access the export-controlled information. To meet this legal requirement, and as a condition of employment, the successful candidate’s citizenship will be verified with a valid passport. Lawful permanent residents, refugees, and asylees may verify status using other documents, where applicable.
Ability to leverage AI tools to drive innovation and efficiency (e.g., performance modeling and analysis, research gathering, day-to-day task automation).
Ability to work in an “AI-first” environment using modern AI tools to accelerate discovery through hardware development.
**Preferred Qualifications **
PhD in Physics, Materials Science, Materials Engineering, or related field AND 0–2+ years of experience in industry or advanced R&D
- OR Master’s degree AND 3–5+ years of relevant experience
Hands-on experience with:
- Molecular Beam Epitaxy (MBE) or related thin-film growth techniques
- Semiconductor or quantum materials systems
Experience designing and executing controlled experiments and analyzing data
Experience with semiconductor–superconductor hybrid materials or III–V semiconductors
Familiarity with low-temperature device characterization and materials-device correlations
Experience improving materials quality, interface control, or reproducibility
Proficiency with scientific programming and data analysis tools (e.g., Python)
Demonstrated ability to work effectively in interdisciplinary teams
#Quantum #QuantumCareers #MDQCareers
Quantum Engineering IC4 - The typical base pay range for this role across the U.S. is USD $119,800.00 - $234,700.00 per year. There is a different range applicable to specific work locations, within the San Francisco Bay area and New York City metropolitan area, and the base pay range for this role in those locations is USD $160,200.00 - $261,000.00 per year.
Certain roles may be eligible for benefits and other compensation. Find additional benefits and pay information here: https://careers.microsoft.com/us/en/us-corporate-pay
This position will be open for a minimum of 5 days, with applications accepted on an ongoing basis until the position is filled.
Microsoft is an equal opportunity employer. All qualified applicants will receive consideration for employment without regard to age, ancestry, citizenship, color, family or medical care leave, gender identity or expression, genetic information, immigration status, marital status, medical condition, national origin, physical or mental disability, political affiliation, protected veteran or military status, race, ethnicity, religion, sex (including pregnancy), sexual orientation, or any other characteristic protected by applicable local laws, regulations and ordinances. If you need assistance with religious accommodations and/or a reasonable accommodation due to a disability during the application process, read more about **requesting accommodations.**